Onsemi - NTBG022N120M3S

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NTBG022N120M3S by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTBG022N120M3S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 234 W; Transistor Application: SWITCHING; Maximum Feedback Capacitance (Crss): 14 pF;
Datasheet NTBG022N120M3S Datasheet
In Stock1,347
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 58 A
Maximum Pulsed Drain Current (IDM): 159 A
Surface Mount: YES
No. of Terminals: 7
Maximum Power Dissipation (Abs): 234 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .03 ohm
Avalanche Energy Rating (EAS): 267 mJ
Other Names: 488-NTBG022N120M3SDKR-ND
5556-NTBG022N120M3SCT
488-NTBG022N120M3STR-ND
488-NTBG022N120M3STR
5556-NTBG022N120M3SDKR
488-NTBG022N120M3SDKR
5556-NTBG022N120M3STR
488-NTBG022N120M3SCT-ND
488-NTBG022N120M3SCT
Maximum Feedback Capacitance (Crss): 14 pF
JEDEC-95 Code: TO-263CB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,347 $2.587 $3,484.689

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