Onsemi - NTBGS002N06C

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NTBGS002N06C by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTBGS002N06C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 242 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 252 A;
Datasheet NTBGS002N06C Datasheet
In Stock1,126
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 252 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 6
Maximum Power Dissipation (Abs): 242 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .002 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 26 pF
JEDEC-95 Code: TO-263CB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 252 A
Peak Reflow Temperature (C): 245
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