Onsemi - NTBGS3D5N06C

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NTBGS3D5N06C by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTBGS3D5N06C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 491 A;
Datasheet NTBGS3D5N06C Datasheet
In Stock467
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 127 A
Maximum Pulsed Drain Current (IDM): 491 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 115 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0037 ohm
Avalanche Energy Rating (EAS): 176 mJ
Maximum Feedback Capacitance (Crss): 21 pF
JEDEC-95 Code: TO-263CB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
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Pricing (USD)

Qty. Unit Price Ext. Price
467 $2.120 $990.040

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