Onsemi - NTBL095N65S3H

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NTBL095N65S3H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTBL095N65S3H
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
Datasheet NTBL095N65S3H Datasheet
In Stock2,012
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 284 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 84 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 650 V
Maximum Power Dissipation (Abs): 208 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .095 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
2,012 $3.410 $6,860.920

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