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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTBL095N65S3H |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel; |
| Datasheet | NTBL095N65S3H Datasheet |
| In Stock | 2,012 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 84 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 208 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .095 ohm |
| Avalanche Energy Rating (EAS): | 284 mJ |
| Other Names: |
488-NTBL095N65S3HTR 488-NTBL095N65S3HDKR 2832-NTBL095N65S3H 488-NTBL095N65S3HCT |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 650 V |
