Onsemi - NTD4863NT4G

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NTD4863NT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTD4863NT4G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.6 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
Datasheet NTD4863NT4G Datasheet
In Stock2,091
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.2 A
Maximum Pulsed Drain Current (IDM): 98 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 36.6 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .014 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 60.5 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 49 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,091 $0.053 $110.823

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