Onsemi - NTHD4N02FT1

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NTHD4N02FT1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTHD4N02FT1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
Datasheet NTHD4N02FT1 Datasheet
In Stock446
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.9 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .08 ohm
Maximum Feedback Capacitance (Crss): 50 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.1 A
Peak Reflow Temperature (C): 235
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Pricing (USD)

Qty. Unit Price Ext. Price
446 $0.228 $101.688

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