Onsemi - NTHL1000N170M1

  1. Home
  2. Onsemi - NTHL1000N170M1
NTHL1000N170M1 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTHL1000N170M1
Description Small Signal Field-Effect Transistors;
Datasheet NTHL1000N170M1 Datasheet
In Stock1,899
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,899 $2.290 $4,348.710

Popular Products

Category Top Products

AO3401L by Alpha & Omega Semiconductor

AO3401L

Alpha & Omega Semiconductor

AO3401L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.2A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.05 ohm RDS(on) and 77 pF Crss capacitance.
BSS123LT7G by Onsemi

BSS123LT7G

Onsemi

BSS123LT7G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring an enhancement mode transistor with built-in diode. Operates b/w -55 to 150 °C, making it suitable for various electronic devices.
2N7000 by Weitron Technology

2N7000

Weitron Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .2 A;
2N7002BK,215 by NXP Semiconductors

2N7002BK,215

NXP Semiconductors

NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.
BSS138/L99Z by National Semiconductor

BSS138/L99Z

National Semiconductor

BSS138/L99Z by National Semiconductor is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.22A ID, and 6 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
2N7002P,215 by Nexperia

2N7002P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Terminal Position: DUAL; Peak Reflow Temperature (C): 260;
IRLML2502TRPBF-1 by Infineon Technologies

IRLML2502TRPBF-1

Infineon Technologies

Infineon's IRLML2502TRPBF-1 is a N-channel FET with 20V DS breakdown voltage and 4.2A max drain current. Ideal for enhancement mode operation, it has a built-in diode and 0.045 ohm RDS(on). Widely used in small outline packages for applications requiring high power dissipation up to 1.25W at temperatures ranging from -55°C to 150°C.
2N7002L by Fairchild Semiconductor

2N7002L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Terminal Position: DUAL; Maximum Drain-Source On Resistance: 7.5 ohm;
BSS123W by Changzhou Galaxy Century Microelectronics

BSS123W

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Power Dissipation Ambient: .2 W; Package Body Material: PLASTIC/EPOXY;
FDS4435BZ by Onsemi

FDS4435BZ

Onsemi

FDS4435BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, 0.02 ohm On Resistance, and 345pF Feedback Capacitance.
2N7002DW-7-F by Diodes Incorporated

2N7002DW-7-F

Diodes Incorporated

2N7002DW-7-F by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A drain current, and 7.5 ohm on-resistance. Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C temperature.
IRLML5103TRPBF by International Rectifier

IRLML5103TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
2N7002BKV by NXP Semiconductors

2N7002BKV

NXP Semiconductors

NXP Semiconductors' 2N7002BKV is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a SMALL OUTLINE package, operating from -55 to 150 °C. Max ID of 0.34A and RDS(on) of 1.6 ohm make it suitable for various electronic designs.
BSS8402DW-7-F by Diodes Incorporated

BSS8402DW-7-F

Diodes Incorporated

BSS8402DW-7-F by Diodes Inc. is a small signal FET with N-channel and P-channel polarity. It has a min DS breakdown voltage of 60V and max drain current of 0.13A, making it suitable for switching applications. Its package style is small outline with gull wing terminals, and it operates in enhancement mode at temperatures up to 150°C.
2N7002T by Jiangsu Changjiang Electronics Technology

2N7002T

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
2N7000 by Micro Commercial Components

2N7000

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
MGSF1N02LT1G by Onsemi

MGSF1N02LT1G

Onsemi

MGSF1N02LT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
SN7002NH6327XTSA2 by Infineon Technologies

SN7002NH6327XTSA2

Infineon Technologies

Infineon's SN7002NH6327XTSA2 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS(on). Ideal for small signal applications due to its 4.2pF Crss, it features a built-in diode and operates in enhancement mode. The GULL WING terminal form and SILICON element material make it suitable for surface mount designs.
BSS84W-7-F by Diodes Incorporated

BSS84W-7-F

Diodes Incorporated

BSS84W-7-F by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. This MOSFET comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
BSP171PH6327XTSA1 by Infineon Technologies

BSP171PH6327XTSA1

Infineon Technologies

BSP171PH6327XTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 1.9A max drain current. Ideal for small outline applications, it features a built-in diode, 0.3 ohm RDS(on), and operates in enhancement mode up to 150°C.