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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTHS5404T1G |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel; |
Datasheet | NTHS5404T1G Datasheet |
In Stock | 10,309 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 5.2 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | .7 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-XDSO-C8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | C BEND |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .03 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | 5.2 A |
Peak Reflow Temperature (C): | 260 |