Onsemi - NTJD2152PT1

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NTJD2152PT1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTJD2152PT1
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 8 V;
Datasheet NTJD2152PT1 Datasheet
In Stock1,216
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .775 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 6
Maximum Power Dissipation (Abs): .55 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .3 ohm
Maximum Feedback Capacitance (Crss): 40 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .775 A
Peak Reflow Temperature (C): 235
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