Onsemi - NTLGD3502NT2G

NTLGD3502NT2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLGD3502NT2G
Description N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 40;
Datasheet NTLGD3502NT2G Datasheet
In Stock1,496
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4.3 A
Maximum Pulsed Drain Current (IDM): 17.2 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .06 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,496 $0.455 $680.680

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