Onsemi - NTLJD3183CZTBG

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NTLJD3183CZTBG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJD3183CZTBG
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 20 V;
Datasheet NTLJD3183CZTBG Datasheet
In Stock628
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.6 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .086 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 2156-NTLJD3183CZTBG-ONTR-ND
ONSONSNTLJD3183CZTBG
2156-NTLJD3183CZTBG
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
628 $0.195 $122.460

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