Onsemi - NTLJS053N12MCLTAG

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NTLJS053N12MCLTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJS053N12MCLTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Body Material: PLASTIC/EPOXY; Package Shape: SQUARE;
Datasheet NTLJS053N12MCLTAG Datasheet
In Stock2,160
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 120 V
Maximum Power Dissipation (Abs): 2.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .053 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
2,160 $0.940 $2,030.400

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