Onsemi - NTMFD4902NFT3G

NTMFD4902NFT3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFD4902NFT3G
Description N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 60 A; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
Datasheet NTMFD4902NFT3G Datasheet
In Stock458
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13.5 A
Maximum Pulsed Drain Current (IDM): 60 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .01 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 28.8 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
458 $1.110 $508.380

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