Onsemi - NTMFS002P03P8ZST1G

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NTMFS002P03P8ZST1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS002P03P8ZST1G
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 138.9 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V;
Datasheet NTMFS002P03P8ZST1G Datasheet
In Stock1,721
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 263 A
Maximum Pulsed Drain Current (IDM): 648 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 138.9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
Avalanche Energy Rating (EAS): 212.3 mJ
Maximum Feedback Capacitance (Crss): 4870 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
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