NTMFS002P03P8ZT3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFS002P03P8ZT3G
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 138.9 W; Maximum Drain Current (ID): 34.6 A; No. of Terminals: 5;
Datasheet	NTMFS002P03P8ZT3G Datasheet
In Stock	914

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	4880 pF
Maximum Drain Current (ID):	34.6 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	5
Minimum DS Breakdown Voltage:	30 V
Maximum Power Dissipation (Abs):	138.9 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	226 A
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0017 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
914	-	-

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