Onsemi - NTMFS4939NT3G

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NTMFS4939NT3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS4939NT3G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 53 A; Terminal Finish: Tin (Sn);
Datasheet NTMFS4939NT3G Datasheet
In Stock278
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.3 A
Maximum Pulsed Drain Current (IDM): 159 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 5
Maximum Power Dissipation (Abs): 30 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .008 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 48 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 53 A
Peak Reflow Temperature (C): NOT SPECIFIED
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