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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTMFS5C646NL1G |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Case Connection: DRAIN; JESD-30 Code: R-PDSO-F5; |
Datasheet | NTMFS5C646NL1G Datasheet |
In Stock | 1,337 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 89 A |
Maximum Pulsed Drain Current (IDM): | 720 A |
Surface Mount: | YES |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | 66 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0047 ohm |
Avalanche Energy Rating (EAS): | 185 mJ |
Maximum Feedback Capacitance (Crss): | 17 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Drain Current (Abs) (ID): | 89 A |