Onsemi - NTMFS5C646NL1G

NTMFS5C646NL1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTMFS5C646NL1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Case Connection: DRAIN; JESD-30 Code: R-PDSO-F5;
Datasheet NTMFS5C646NL1G Datasheet
In Stock1,337
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 89 A
Maximum Pulsed Drain Current (IDM): 720 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 66 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0047 ohm
Avalanche Energy Rating (EAS): 185 mJ
Maximum Feedback Capacitance (Crss): 17 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 89 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,337 - -

Popular Products

Category Top Products