Onsemi - NTMFS5H414NLT1G

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NTMFS5H414NLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS5H414NLT1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Minimum DS Breakdown Voltage: 40 V; Avalanche Energy Rating (EAS): 290 mJ;
Datasheet NTMFS5H414NLT1G Datasheet
In Stock1,286
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 210 A
Maximum Pulsed Drain Current (IDM): 900 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 5
Maximum Power Dissipation (Abs): 110 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .002 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 290 mJ
Maximum Feedback Capacitance (Crss): 74 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 210 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,286 $1.065 $1,369.590

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