Onsemi - NTMFS6H852NT1G

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NTMFS6H852NT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS6H852NT1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;
Datasheet NTMFS6H852NT1G Datasheet
In Stock1,316
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 5
Maximum Power Dissipation (Abs): 54 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0227 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 184 mJ
Maximum Feedback Capacitance (Crss): 5.4 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Maximum Drain Current (Abs) (ID): 40 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,316 $0.890 $1,171.240

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