Onsemi - NTMFSC0D9N04C

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NTMFSC0D9N04C by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFSC0D9N04C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 40 V;
Datasheet NTMFSC0D9N04C Datasheet
In Stock1,841
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 313 A
Maximum Pulsed Drain Current (IDM): 900 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 166 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00087 ohm
Avalanche Energy Rating (EAS): 578 mJ
Maximum Feedback Capacitance (Crss): 70 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 313 A
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