NTMKB4893NT3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMKB4893NT3G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 87 A;
Datasheet	NTMKB4893NT3G Datasheet
In Stock	2,210

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15.8 A
Maximum Pulsed Drain Current (IDM):	124 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	65 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0054 ohm
Avalanche Energy Rating (EAS):	79.4 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	87 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,210	-	-

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