NTNS260P02P8ZTCG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTNS260P02P8ZTCG
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .178 W; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	NTNS260P02P8ZTCG Datasheet
In Stock	165

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.574 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.178 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.348 ohm
Maximum Feedback Capacitance (Crss):	16 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
165	-	-

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RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

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