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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTNS3A65PZT5G |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .218 W; Maximum Drain Current (Abs) (ID): .281 A; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | NTNS3A65PZT5G Datasheet |
| In Stock | 272,933 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NTNS3A65PZT5G-ND ONSONSNTNS3A65PZT5G NTNS3A65PZT5GOSDKR NTNS3A65PZT5GOSCT NTNS3A65PZT5GOSTR 2156-NTNS3A65PZT5G-OS |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .281 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| JESD-609 Code: | e4 |
| Maximum Power Dissipation (Abs): | .218 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .281 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |








