Onsemi - NTNS4C69NT5G

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NTNS4C69NT5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTNS4C69NT5G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .16 ohm;
Datasheet NTNS4C69NT5G Datasheet
In Stock1,749
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .76 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .16 ohm
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