NTP185N60S5H by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTP185N60S5H
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 116 W; Avalanche Energy Rating (EAS): 124 mJ; Package Style (Meter): FLANGE MOUNT;
Datasheet	NTP185N60S5H Datasheet
In Stock	1,202

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	124 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	53 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	600 V
Maximum Power Dissipation (Abs):	116 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.185 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,202	$1.690	$2,031.380

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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