NTTFD022N10C by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTTFD022N10C
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; JESD-30 Code: S-PQCC-N8; Maximum Feedback Capacitance (Crss): 8 pF;
Datasheet	NTTFD022N10C Datasheet
In Stock	1,969

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	24 A
Maximum Pulsed Drain Current (IDM):	349 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	26 W
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-PQCC-N8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN SOURCE
Maximum Drain-Source On Resistance:	.025 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	39 mJ
Other Names:	488-NTTFD022N10CDKR 488-NTTFD022N10CCT 488-NTTFD022N10CTR 2832-NTTFD022N10CTR
Maximum Feedback Capacitance (Crss):	8 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Maximum Drain Current (Abs) (ID):	24 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,969	$3.600	$7,088.400

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