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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTTFD9D0N06HLTWG |
Description | N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): 38 A; Terminal Position: QUAD; Maximum Time At Peak Reflow Temperature (s): 30; |
Datasheet | NTTFD9D0N06HLTWG Datasheet |
In Stock | 233 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 38 A |
Maximum Pulsed Drain Current (IDM): | 349 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 12 |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | S-PQCC-N12 |
No. of Elements: | 2 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .009 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 46 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Drain Current (Abs) (ID): | 38 A |
Peak Reflow Temperature (C): | 260 |