Onsemi - NTTFS016N06CTAG

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NTTFS016N06CTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTTFS016N06CTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Minimum DS Breakdown Voltage: 60 V; Terminal Position: DUAL;
Datasheet NTTFS016N06CTAG Datasheet
In Stock877
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 8
Maximum Power Dissipation (Abs): 36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0163 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 22 mJ
Maximum Feedback Capacitance (Crss): 5.7 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 32 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
877 $1.040 $912.080

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