Onsemi - NTTFS5C454NLTAG

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NTTFS5C454NLTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTTFS5C454NLTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 202 mJ;
Datasheet NTTFS5C454NLTAG Datasheet
In Stock2,995
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 85 A
Maximum Pulsed Drain Current (IDM): 520 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 8
Maximum Power Dissipation (Abs): 55 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .006 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 202 mJ
Other Names: 2156-NTTFS5C454NLTAG-OS
NTTFS5C454NLTAGOSDKR
NTTFS5C454NLTAGOSTR
NTTFS5C454NLTAGOSCT
ONSONSNTTFS5C454NLTAG
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 85 A
Peak Reflow Temperature (C): 260
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