Onsemi - NTZD5110NT1G

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NTZD5110NT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTZD5110NT1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
Datasheet NTZD5110NT1G Datasheet
In Stock51,417
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .294 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.6 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: ONSONSNTZD5110NT1G
2156-NTZD5110NT1G-OS
NTZD5110NT1GOSTR
NTZD5110NT1G-ND
NTZD5110NT1GOSCT
NTZD5110NT1GOSDKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .294 A
Peak Reflow Temperature (C): 260
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