NVH4L027N65S3F by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVH4L027N65S3F
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
Datasheet	NVH4L027N65S3F Datasheet
In Stock	1,424

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	187.5 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	595 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0274 ohm
Avalanche Energy Rating (EAS):	1610 mJ
Maximum Feedback Capacitance (Crss):	26 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,424	$20.410	$29,063.840

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