Onsemi - NVH820S75L4SPB

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NVH820S75L4SPB by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVH820S75L4SPB
Description N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 820 A; Minimum Operating Temperature: -40 Cel;
Datasheet NVH820S75L4SPB Datasheet
In Stock2,194
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 820 A
Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.6 V
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 1354 ns
No. of Terminals: 33
Maximum Power Dissipation (Abs): 1000 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 454 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X33
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Other Names: 2156-NVH820S75L4SPB-488
488-NVH820S75L4SPB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 750 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.55 V
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Pricing (USD)

Qty. Unit Price Ext. Price
2,194 $378.010 $829,353.940

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