NVMFD5852NLT1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVMFD5852NLT1
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 80 mJ; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
Datasheet	NVMFD5852NLT1 Datasheet
In Stock	1,300

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	80 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	329 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	40 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.012 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,300	-	-

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.