Onsemi - NVMFD5C470NLT1G

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NVMFD5C470NLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMFD5C470NLT1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; JESD-30 Code: R-PDSO-F6;
Datasheet NVMFD5C470NLT1G Datasheet
In Stock2,012
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Pulsed Drain Current (IDM): 110 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0178 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 49 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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Pricing (USD)

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2,012 $0.796 $1,601.552

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