Onsemi - NVMFS014P04M8LT1G

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NVMFS014P04M8LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMFS014P04M8LT1G
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Feedback Capacitance (Crss): 32 pF; Package Shape: RECTANGULAR;
Datasheet NVMFS014P04M8LT1G Datasheet
In Stock2,215
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 52.1 A
Maximum Pulsed Drain Current (IDM): 268 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 60 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0138 ohm
Avalanche Energy Rating (EAS): 133 mJ
Other Names: 488-NVMFS014P04M8LT1GDKR
2832-NVMFS014P04M8LT1G
488-NVMFS014P04M8LT1GTR
488-NVMFS014P04M8LT1GCT
Maximum Feedback Capacitance (Crss): 32 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
2,215 $1.000 $2,215.000

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