NVMFS025P04M8LT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVMFS025P04M8LT1G
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44.1 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
Datasheet	NVMFS025P04M8LT1G Datasheet
In Stock	2,377

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	9.4 A
Maximum Pulsed Drain Current (IDM):	204 A
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	44.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.023 ohm
Avalanche Energy Rating (EAS):	152 mJ
Maximum Feedback Capacitance (Crss):	19 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,377	$0.333	$791.541

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