Onsemi - NVMFS6H836NT3G

NVMFS6H836NT3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMFS6H836NT3G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Terminal Finish: Matte Tin (Sn) - annealed; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet NVMFS6H836NT3G Datasheet
In Stock2,226
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 74 A
Maximum Pulsed Drain Current (IDM): 432 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 6
Maximum Power Dissipation (Abs): 89 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0067 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 521 mJ
Maximum Feedback Capacitance (Crss): 8 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,226 $1.400 $3,116.400

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