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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NVMJS1D5N04LCTAG |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Power Dissipation (Abs): 107 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 72 pF; Minimum DS Breakdown Voltage: 40 V; |
| Datasheet | NVMJS1D5N04LCTAG Datasheet |
| In Stock | 2,422 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 493 mJ |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 72 pF |
| Maximum Drain Current (ID): | 185 A |
| Maximum Pulsed Drain Current (IDM): | 900 A |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Maximum Power Dissipation (Abs): | 107 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 185 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .0024 ohm |









