Onsemi - NVMTS1D3P04M8LTXG

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NVMTS1D3P04M8LTXG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMTS1D3P04M8LTXG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .019 ohm;
Datasheet NVMTS1D3P04M8LTXG Datasheet
In Stock274
NAME DESCRIPTION
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 410 pF
Maximum Drain Current (ID): 361 A
Polarity or Channel Type: P-CHANNEL
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): 300 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 361 A
Maximum Drain-Source On Resistance: .019 ohm
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