Onsemi - NXH100B120H3Q0PG

NXH100B120H3Q0PG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH100B120H3Q0PG
Description N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 186 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet NXH100B120H3Q0PG Datasheet
In Stock555
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Nominal Turn Off Time (toff): 291 ns
No. of Terminals: 22
Maximum Power Dissipation (Abs): 186 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 61 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X22
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: RC-IGBT
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.3 V
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Pricing (USD)

Qty. Unit Price Ext. Price
555 $47.280 $26,240.400

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