Onsemi - NXH100B120H3Q0STG

NXH100B120H3Q0STG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NXH100B120H3Q0STG
Description N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 186 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet NXH100B120H3Q0STG Datasheet
In Stock2,345
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 291 ns
No. of Terminals: 22
Maximum Power Dissipation (Abs): 186 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 61 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X22
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: RC-IGBT
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.3 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,345 $51.240 $120,157.800

Popular Products

Category Top Products