NXH80B120MNQ0SNG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH80B120MNQ0SNG
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 69 W; Transistor Element Material: SILICON CARBIDE; Maximum Drain Current (ID): 23 A;
Datasheet	NXH80B120MNQ0SNG Datasheet
In Stock	939

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	23 A
Maximum Pulsed Drain Current (IDM):	69 A
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	22
Maximum Power Dissipation (Abs):	69 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X22
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.11 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	23 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
939	$65.290	$61,307.310

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