PCFQ3P50W by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	PCFQ3P50W
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 12 pF; Package Shape: RECTANGULAR;
Datasheet	PCFQ3P50W Datasheet
In Stock	1,540

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	155 ns
Maximum Drain Current (ID):	2.1 A
Maximum Pulsed Drain Current (IDM):	8.4 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	180 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	4.9 ohm
Avalanche Energy Rating (EAS):	250 mJ
Maximum Feedback Capacitance (Crss):	12 pF
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	500 V
Maximum Drain Current (Abs) (ID):	2.1 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,540	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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