Onsemi - SBSS123LT1

  1. Home
  2. Onsemi - SBSS123LT1
SBSS123LT1 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SBSS123LT1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; JEDEC-95 Code: TO-236; Terminal Position: DUAL;
Datasheet SBSS123LT1 Datasheet
In Stock285
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .17 A
JEDEC-95 Code: TO-236
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 6 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
285 - -

Popular Products

Category Top Products

MMBF170LT1 by Motorola

MMBF170LT1

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
2N7002T by Jiangsu Changjiang Electronics Technology

2N7002T

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
2N7000 by Vishay Semiconductors

2N7000

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;
FDC604P by Onsemi

FDC604P

Onsemi

FDC604P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 5.5A.
SI2323DDS-T1-GE3 by Vishay Intertechnology

SI2323DDS-T1-GE3

Vishay Intertechnology

SI2323DDS-T1-GE3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and operates in enhancement mode. With a max drain current of 5.3A and a max drain-source on resistance of 0.039 ohm, it offers efficient performance in a compact package.
NTR4171PT1G by Onsemi

NTR4171PT1G

Onsemi

NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
2N7002 by Transys Electronics

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
ZXMS6004FFQTA by Diodes Incorporated

ZXMS6004FFQTA

Diodes Incorporated

ZXMS6004FFQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and -40 to 150 °C operating temp. Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE tech and built-in diode.
IRFHS9351TRPBF by Infineon Technologies

IRFHS9351TRPBF

Infineon Technologies

IRFHS9351TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS, 5.1A Drain Current, and 0.17 ohm On Resistance. With a max power dissipation of 1.4W and operating temperature up to 150°C, it's suitable for various electronic devices requiring high-performance transistors.
BSN20BKR by NXP Semiconductors

BSN20BKR

NXP Semiconductors

NXP Semiconductors' BSN20BKR is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include SINGLE configuration with BUILT-IN DIODE, 0.265A ID, and 3.2Ω RDS(on). Suitable for ENHANCEMENT MODE operation in surface mount designs.
BC548B by Sprague Electric

BC548B

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel;
SI2309CDS-T1-E3 by Vishay Intertechnology

SI2309CDS-T1-E3

Vishay Intertechnology

SI2309CDS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 1.6A Drain Current, and 0.345 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.7W in a SMALL OUTLINE package suitable for surface mount technology.
2N7002KW by Yangzhou Yangjie Electronics

2N7002KW

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 2.5 ohm; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
BSS84P-E6327 by Infineon Technologies

BSS84P-E6327

Infineon Technologies

BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
FDS4435BZ by Fairchild Semiconductor

FDS4435BZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
MMBF170LT3G by Onsemi

MMBF170LT3G

Onsemi

MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
BSS123W by Fairchild Semiconductor

BSS123W

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .17 A; Minimum DS Breakdown Voltage: 100 V;
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
BSS84 by Siemens

BSS84

Siemens

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 10 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
BSP171PH6327 by Infineon Technologies

BSP171PH6327

Infineon Technologies

Infineon Technologies' BSP171PH6327 is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It has a max drain current of 1.9A and a max drain-source on resistance of 0.3 ohm. This small outline transistor is suitable for applications requiring high voltage and low resistance.