Onsemi - SFT1450-TL-H

  1. Home
  2. Onsemi - SFT1450-TL-H
SFT1450-TL-H by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SFT1450-TL-H
Description Small Signal Field-Effect Transistors; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1;
Datasheet SFT1450-TL-H Datasheet
In Stock1,308
NAME DESCRIPTION
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,308 $0.347 $453.876

Popular Products

Category Top Products

BSS138LT7G by Onsemi

BSS138LT7G

Onsemi

BSS138LT7G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 3.5 ohm max RDS(on), and 150°C max operating temp. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount setups.
BSD235CH6327XTSA1 by Infineon Technologies

BSD235CH6327XTSA1

Infineon Technologies

Infineon's BSD235CH6327XTSA1 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has max ID of 0.95A and RDS(on) of 0.35Ω. Ideal for automotive applications meeting AEC-Q101 standard.
NTR4170NT1G by Onsemi

NTR4170NT1G

Onsemi

NTR4170NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A ID, and 0.055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. This small outline transistor has a max power dissipation of 1.25W and can withstand temperatures up to 150°C.
2N7002 by Lite-on Semiconductor

2N7002

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
MMBF170LT3G by Onsemi

MMBF170LT3G

Onsemi

MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
BSS84 by Diodes Incorporated

BSS84

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
BSS138PW,115 by NXP Semiconductors

BSS138PW,115

NXP Semiconductors

NXP Semiconductors' BSS138PW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for switching applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and meets AEC-Q101 standards for automotive use.
FDC604P by Fairchild Semiconductor

FDC604P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Terminals: 6; Operating Mode: ENHANCEMENT MODE;
BSS84 by Good-ark Electronics

BSS84

Good-ark Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .13 A; Package Shape: RECTANGULAR;
SI2302CDS-T1-E3 by Vishay Intertechnology

SI2302CDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2302CDS-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2.6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.057 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.
FDS4435BZ by Onsemi

FDS4435BZ

Onsemi

FDS4435BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, 0.02 ohm On Resistance, and 345pF Feedback Capacitance.
BSS138BKT116 by ROHM

BSS138BKT116

ROHM

ROHM BSS138BKT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS(on). Ideal for switching applications in small outline packages. Operating in enhancement mode with GULL WING terminals, it's a versatile choice for compact designs.
BSS84PH6327XTSA2 by Infineon Technologies

BSS84PH6327XTSA2

Infineon Technologies

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
2N7002-G by Supertex

2N7002-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH INPUT IMPEDANCE; No. of Elements: 1; Terminal Finish: MATTE TIN;
FDMA1032CZ by Fairchild Semiconductor

FDMA1032CZ

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: ESD PROTECTION; Maximum Drain Current (Abs) (ID): 3.7 A;
FDV305N_NL by Fairchild Semiconductor

FDV305N_NL

Fairchild Semiconductor

FDV305N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.9A Drain Current, and 0.22 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
FDN340P by Fairchild Semiconductor

FDN340P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Minimum DS Breakdown Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
FDC6305N by Onsemi

FDC6305N

Onsemi

FDC6305N by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.7A, Max Power Dissipation of 0.96W, and Max Operating Temperature of 150°C. This small outline transistor has a rectangular package and operates in ENHANCEMENT MODE.
BSS138PS,115 by Nexperia

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;