Onsemi - SI9933BDY

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SI9933BDY by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number SI9933BDY
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 20 V;
Datasheet SI9933BDY Datasheet
In Stock2,351
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 120 ns
Maximum Drain Current (ID): 3.4 A
Maximum Pulsed Drain Current (IDM): 16 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 110 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .075 ohm
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Maximum Drain Current (Abs) (ID): 3.4 A
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Pricing (USD)

Qty. Unit Price Ext. Price
2,351 $0.282 $662.982

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