Onsemi - SPM2001A

  1. Home
  2. Onsemi - SPM2001A
SPM2001A by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SPM2001A
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3;
Datasheet SPM2001A Datasheet
In Stock2,270
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
No. of Terminals: 6
Package Equivalence Code: TSOP6,.11,37
Technology: GAAS
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 70 mA
Power Supplies (V): 3
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,270 - -

Popular Products

Category Top Products

MBC13916NT1 by Freescale Semiconductor

MBC13916NT1

Freescale Semiconductor

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Maximum Input Power (CW): 10 dBm; JESD-609 Code: e3; Maximum Operating Frequency: 2500 MHz;
CHA3666-QAG by United Monolithic Semiconductor Sas

CHA3666-QAG

United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.
TGA4521 by Triquint Semiconductor

TGA4521

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;
M67799HA by Mitsubishi Electric

M67799HA

Mitsubishi Electric

Mitsubishi Electric's M67799HA is a hybrid module with 450-470 MHz frequency range, 50 ohm impedance, and 14.77 dBm CW input power. Ideal for narrowband high-power RF applications, it operates b/w -30 to 100°C with VSWR of up to 20 in plastic/epoxy package.
HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
HMC5879LS7 by Hittite Microwave

HMC5879LS7

Hittite Microwave

WIDE BAND HIGH POWER;
BGA622H6820XTSA1 by Infineon Technologies

BGA622H6820XTSA1

Infineon Technologies

Infineon's BGA622H6820XTSA1 is a wide band low power RF amplifier with 13.6 dB gain, operating from 500 MHz to 6000 MHz. It can handle up to 6 dBm input power and operates b/w -65°C to 150°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.
HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.
ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.
MGA-82563-BLKG by Agilent Technologies

MGA-82563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;
MGA-53543-BLKG by Broadcom

MGA-53543-BLKG

Broadcom

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.
HMC451LP3ETR by Hittite Microwave

HMC451LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
MGA-23003-TR1G by Broadcom

MGA-23003-TR1G

Broadcom

Broadcom's MGA-23003-TR1G is a GAAS RF amplifier with 32dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 15dBm and is ideal for narrowband medium-power applications in the RF & Microwave field.
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
HMC1082LP4E by Analog Devices

HMC1082LP4E

Analog Devices

HMC1082LP4E by Analog Devices is a wide band medium power RF amplifier with 20 dB gain. It operates from 5V supply, covering frequencies from 5500 MHz to 18000 MHz. This component, housed in a plastic/epoxy package, is ideal for RF and microwave applications requiring high performance amplification.
MSA-1105-TR1 by Hewlett Packard

MSA-1105-TR1

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;
SST13LP05-MLCF by Microchip Technology

SST13LP05-MLCF

Microchip Technology

SST13LP05-MLCF by Microchip Technology is a wide band medium power RF amplifier with 28 dB gain. It operates b/w 2400-2500 MHz, ideal for wireless communication applications. The component has 16 terminals, matte tin finish, and can handle temperatures from -40 to 85°C.
GALI-6 by Mini-circuits

GALI-6

Mini-circuits

The Mini-circuits GALI-6 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for surface mount applications in RF & microwave systems, it offers VSWR of 2 and operates b/w -45°C to +85°C.
NBB-400-D by Qorvo

NBB-400-D

Qorvo

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.