Onsemi - SVC342L

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 20 V;

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

BB149A,115 by NXP Semiconductors is a varactor diode with a capacitance of 19.74 pF and breakdown voltage of 30 V. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as tuning circuits in RF communication systems. The diode comes in a small outline package with gull wing terminals, making it ideal for surface mount designs.

BB202,115 by NXP Semiconductors is a varactor diode with a max operating temperature of 85°C and min of -55°C. It has a diode type of variable capacitance with a max repetitive peak reverse voltage of 6V. This diode is commonly used in applications requiring precise tuning capabilities in electronic circuits.

MV2105RLRP by Onsemi is a Varactor Diode with 15pF nominal capacitance, 30V breakdown voltage, and 400 min quality factor. It is ideal for applications requiring variable capacitance diodes in environments up to 150 °C operating temperature.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BBY39TRL13 by NXP Semiconductors is a surface-mount varactor diode featuring a dual terminal design and a min capacitance ratio of 8. Its compact rectangular package makes it ideal for RF tuning applications. This silicon-based component ensures reliable performance in various electronic circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

KVX2162-23-0/TR by Microchip: Varactor Diode with 10pF capacitance, 22V breakdown voltage, and 400 min quality factor. Ideal for VHF to L band applications due to hyperabrupt diode classification. Operates b/w -55°C to 125°C, suitable for surface mount designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

GC1719-192 by Microchip Technology is a SINGLE varactor diode with 33pF nominal capacitance, abrupt classification, and 800 min quality factor. Ideal for applications in very high frequency to Ku band due to its 60V min breakdown voltage and -55°C to 125°C operating temperature range.

BB640E6327HTSA1 by Infineon Technologies is a varactor diode with a min capacitance ratio of 19.5, ideal for frequency tuning applications. It features a small outline package shape, gull wing terminal form, and dual terminals for surface mount configurations. The diode element material is silicon with tin terminal finish in a plastic/epoxy body material.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

The Onsemi SVC321A is a varactor diode with a min quality factor of 200, ideal for RF applications. Featuring a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C. Its single configuration and variable capacitance make it suitable for tuning circuits in electronic devices.

The Toshiba 1SV228 is a Varactor Diode with common cathode configuration, suitable for surface mount applications. It features a max reverse voltage of 15V, diode capacitance ratio of 2.1, and operates up to 125°C. Ideal for electronic circuits requiring variable capacitance and high breakdown voltage.

BB249TRL by NXP Semiconductors is a single, surface-mount variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8 and comes in a long-form round glass package with isolated case connections. Ideal for RF tuning and voltage-controlled oscillators, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BBY42TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.