Onsemi - TF202CE4

  1. Home
  2. Onsemi - TF202CE4
TF202CE4 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number TF202CE4
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;
Datasheet TF202CE4 Datasheet
In Stock1,167
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .1 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,167 - -

Popular Products

Category Top Products

MMBT2222A by Unisonic Technologies

MMBT2222A

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
MMBT5551 by Sinyork

MMBT5551

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 80;
BDX53C by Inchange Semiconductor

BDX53C

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
2N4401 by North American Philips Discrete Products Div

2N4401

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BC847C by Shanghai Lunsure Electronic Technology

BC847C

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
PMBT2222A by Philips Semiconductors

PMBT2222A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
2N4401 by Secos

2N4401

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N7000-G by Weitron Technology

2N7000-G

Weitron Technology

Other Transistors;
2N3055 by Harris Semiconductor

2N3055

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N2907AUB by New England Semiconductor

2N2907AUB

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
BC846B by Philips Semiconductors

BC846B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2907A by Fairchild Semiconductor

2N2907A

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC807-40 by North American Philips Discrete Products Div

BC807-40

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;
BC817-16 by Secos

BC817-16

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
SC0321 by Fairchild Semiconductor

SC0321

Fairchild Semiconductor

SC0321 by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 115W and max collector current of 10A. With a min DC current gain of 20, it operates up to 175°C. Ideal for applications requiring high power handling and reliable performance in various electronic circuits.
2N2907A by Ksl Microdevices

2N2907A

Ksl Microdevices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
TIP110 by Semitronics

TIP110

Semitronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: Tin/Lead (Sn/Pb);
BDW93C by Texas Instruments

BDW93C

Texas Instruments

Texas Instruments' BDW93C NPN Darlington transistor offers 80W power dissipation, 750 min hFE, and 12A max collector current. Ideal for high-power applications in environments up to 150°C.
2N3906 by North American Philips Discrete Products Div

2N3906

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847B/DG,215 by NXP Semiconductors

BC847B/DG,215

NXP Semiconductors

NXP Semiconductors BC847B/DG,215 is an NPN transistor with a single configuration for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 200, and max operating temp of 150°C. Ideal for low-power electronic circuits requiring high frequency operation up to 100MHz.