Onsemi - VEC2315-TL-H

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VEC2315-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number VEC2315-TL-H
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Transistor Application: AMPLIFIER; Terminal Form: FLAT;
Datasheet VEC2315-TL-H Datasheet
In Stock2,424
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 2.5 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .137 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 2.5 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,424 $0.270 $654.480

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